2

2SC5183R

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector cutoff current

ICBO

VCB = 5 V, IE = 0

100

nA

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

100

nA

DC gain

hFE

VCE = 2 V, IC = 20 mANote 1

70

140

Forward transfer gain (1)

| S21e | 2

VCE = 2 V, IC = 20 mA, f = 2 GHz

7.5

10

dB

Forward transfer gain (2)

| S21e | 2

VCE = 1 V, IC = 10 mA, f = 2 GHz

7

8.5

dB

Noise figure (1)

NF

VCE = 2 V, IC = 3 mA, f = 2 GHz

1.3

2.0

dB

Noise figure (2)

NF

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.3

2.0

dB

Gain bandwidth product (1)

fr

VCE = 2 V, IC = 20 mA, f = 2 GHz

9.5

12.5

GHz

Gain bandwidth product (2)

fr

VCE = 1 V, IC = 10 mA, f = 2 GHz

7.5

10.5

GHz

Feedback capacitance

Cre

VCB = 2 V, IE = 0 mA, f = 1 MHzNote 2

0.3

0.6

pF

Notes 1. Measured with pulses: Pulse width

≤ 350

µs, duty cycle ≤ 2 %, pulsed

2. Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard

terminal of the bridge.

hFE class

CLASS

FB

Marking

86 T

hFE

70 to 140

CHARACTERISTIC CURVES (TA = 25

°C)

200

100

0

50

100

150

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

BASE-TO-EMITTER VOLTAGE

50

40

30

20

10

0

0.5

1.0

VCE = 2 V

90 mW

Ambient temperature TA (°C)

Base-to-emitter voltage VBE (V)