DATA SHEET

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this is the latest version.

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representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5435

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

Document No. PU10103EJ01V0DS (1st edition)

(Previous No. P13078EJ1V0DS00)

Date Published February 2002 CP(K)

Printed in Japan

The mark

•

•

•

• shows major revised points.

©

©

©

© NEC Corporation 1998

©

©

©

© NEC Compound Semiconductor Devices 2002

FEATURES

• Contains same chip as 2SC5010

• Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5435

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5435-T1

3 kpcs/reel

• Pin 3 (collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

Ptot

Note

125

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.