Data Sheet PU10103EJ01V0DS

2

2SC5435

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

–

–

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

–

–

100

nA

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 10 mA

75

–

140

–

Gain Bandwidth Product

fT

VCE = 3 V, IC = 10 mA, f = 2 GHz

–

12.0

–

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz

7.0

8.5

–

dB

Noise Figure

NF

VCE = 3 V, IC = 3 mA, f = 2 GHz

–

1.5

2.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

–

0.4

0.7

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

EB

FB

Marking

TK

TL

hFE Value

75 to 110

95 to 140