DATA SHEET

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NPN SILICON RF TRANSISTOR

2SC5674

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

Document No. PU10133EJ01V0DS (1st edition)

Date Published April 2002 CP(K)

Printed in Japan

©

©

©

© NEC Compound Semiconductor Devices 2002

FEATURES

• Ideal for 3 GHz or higher OSC applications

• Low noise, high gain

fT = 21.0 GHz TYP.,

S21e2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt

• 3-pin lead-less minimold package (1005 PKG)

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5674

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5674-T3

10 kpcs/reel

• Pin 2 (Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

3.3

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

35

mA

Total Power Dissipation

Ptot

Note

115

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.