2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

40

V

IDSS

Zero gate voltage drain current

VDS = 40 V, VGS = 0 V

1

µA

VDS = 40 V, VGS = 0 V,

TJ = 125°C(1)

100

IGSS

Gate-body leakage current

VGS = 20 V, VDS = 0 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

1.2

2.0

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 60 A

0.55

0.8

mΩ

VGS = 4.5 V, ID = 60 A

0.85

1.15

RG(1)

Gate resistance

1.2

Ω

1. Specified by design and evaluated by characterization, not tested in production.

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss(1)

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

7657

-

pF

Coss(1)

Output capacitance

-

1968

-

pF

Crss(1)

Reverse transfer capacitance

-

50

-

pF

Qg(1)

Total gate charge

VDD = 20 V, ID = 60 A, VGS = 0 to 4.5 V

-

41

-

nC

VDD = 20 V, ID = 60 A, VGS = 0 to 10 V

-

96

-

Qgs(1)

Gate-source charge

VDD = 20 V, ID = 60 A, VGS = 0 to 4.5 V

-

20

-

nC

Qgd(1)

Gate-drain charge

-

6.9

-

nC

Qg(sync)(1)

Total gate charge, sync. MOSFET VDS = 0.1 V, VGS = 0 to 4.5 V

-

43

-

nC

Qoss(1)

Output charge

VDD = 20 V, VGS = 0 V

-

102

-

nC

1. Specified by design and evaluated by characterization, not tested in production.

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)(1)

Turn-on delay time

VDD = 20 V, ID = 60 A,

RG = 4.7 Ω, VGS = 10 V

-

12.5

-

ns

tr(1)

Rise time

-

6.5

-

ns

td(off)(1)

Turn-off delay time

-

89

-

ns

tf(1)

Fall time

-

21

-

ns

1. Specified by design and evaluated by characterization, not tested in production.

STL320N4LF8

Electrical characteristics

DS13908 - Rev 2

page 3/16