Table 6. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)(2)

Forward on current

(continuous)

TC = 25 °C

-

135

A

VSD

Forward on voltage

ISD = 60 A, VGS = 0 V

-

1.1

V

trr(1)

Reverse recovery time

ID = 60 A, di/dt = 100 A/µs, VDD = 32 V

-

60.1

ns

Qrr(1)

Reverse recovery charge

-

74.4

nC

IRRM(1)

Reverse recovery current

-

2.5

A

1. Specified by design and evaluated by characterization, not tested in production.

2. The value is relevant to RthJC. Current limitations will come from the operating conditions, such as temperature and thermal

resistance of the PCB.

STL320N4LF8

Electrical characteristics

DS13908 - Rev 2

page 4/16