PBSS302PZ datasheet(9/15 Pages) NEXPERIA

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PBSS302PZ_2

Product data sheet

Rev. 02 — 20 November 2009

8 of 14

NXP Semiconductors

PBSS302PZ

20 V, 5.5 A PNP low VCEsat (BISS) transistor

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 9.

Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 10. Collector-emitter saturation voltage as a

function of collector current; typical values

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 11. Collector-emitter saturation resistance as a

function of collector current; typical values

Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

006aaa598

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−10−1

−104

−103

−1

−102

−10

(3)

(2)

(1)

006aaa599

IC (mA)

−10−1

−104

−103

−1

−102

−10

−10−2

−10−1

−1

−10

VCEsat

(V)

−10−3

(3)

(2)

(1)

006aaa601

IC (mA)

−10−1

−104

−103

−1

−102

−10

10−1

102

RCEsat

(

Ω)

10−2

(3)

(2)

(1)

006aaa603

IC (mA)

−10−1

−104

−103

−1

−102

−10

10−1

102

103

RCEsat

(

Ω)

10−2

(3)

(2)

(1)

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