CEU6362 datasheet(1/5 Pages) CET-MOS

Part #	CEU6362

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	CET-MOS [CET-MOS Technology Corp.]

Direct Link	https://www.cet-mos.com/en/index.asp

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N-Channel Enhancement Mode Field Effect Transistor

CED6362/CEU6362

FEATURES

60V, 20.7A, RDS(ON) = 45mW @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

PD

IDM

60

0.28

34.7

82.8

±20

V

W

A

V

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

S

D

RoHS compliant.

RDS(ON) = 52mW @VGS = 4.5V.

ID

20.7

A

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

13

A

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Parameter

Symbol

Limit

Units

C/W

3.6

RqJC

http://www.cet-mos.com

Rev 1. 2022.Jan

Details are subject to change without notice .

Thermal Resistance, Junction-to-Ambient

C/W

50

RqJA

Single Pulsed Avalanche Current e

IAS

7.5

A

Single Pulsed Avalanche Energy e

EAS

28

mJ

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CEU6362 Datasheet(PDF) 1 Page - CET-MOS Technology Corp.

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