CED6362/CEU6362

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

45

1

2.5

-100

100

1

mW

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS

VSD

Typ

Max

60

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 5.3A

VDD = 30V, ID = 1A,

VGS = 10V, RGEN = 6W

VDS = 30V, ID = 4.5A,

VGS = 4.5V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 1A

750

65

50

11

4

51

7

9.7

1.6

4.2

20.7

1.3

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

35

52

mW

VGS = 4.5V, ID = 4.7A

40

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Device Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

e.L =1mH, IAS =7.5A, VDD = 25V, RG = 25W, Starting TJ = 25 C.