ISL70020SEH, ISL73020SEH

2. Specifications

R34DS0007EU0104 Rev.1.04

Page 4 of 12

Apr 21, 2022

2.

Specifications

2.1

Absolute Maximum Ratings

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such

conditions can adversely impact product reliability and result in failures not covered by warranty.

2.2

ESD Ratings

2.3

Thermal Information

2.4

Recommended Operating Conditions

Parameter

Maximum

Unit

VDS (Note 6)

40

V

VGS

-4 to 6

V

Note:

6. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg at +125°C (TC).

ESD Model/Test

Rating

Unit

Drain-to-Source

Human Body Model (Tested per MIL-STD-883 TM3015)

2

kV

Machine Model (Tested per JESD22-A115C)

200

V

Charged Device Model (Tested per JS-002-2014)

750

V

Gate-to-Source

Human Body Model (Tested per MIL-STD-883 TM3015)

500

V

Machine Model (Tested per JESD22-A115C)

200

V

Charged Device Model (Tested per JS-002-2014)

750

V

SMD Package J4.A

Thermal Resistance

Typical

Maximum

Unit

θJA (Note 7)

23.0

°C/W

θJC (Note 8)3.1

3.9

°C/W

Notes:

7. θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features. See

TB379.

8. For θJC, the case temperature location is on the solder terminations adjacent to the center of the package underside.

Parameter

Minimum

Maximum

Unit

Maximum Junction Temperature

-

+150

°C

Storage Temperature Range

-65

+150

°C

Parameter

Maximum

Unit

Ambient Temperature

-55 to +125

°C

VDS

32

V

ID (VGS = 5.0V, TC = +25°C) Note 9

65

A

ID (VGS = 5.0V, TC = +105°C) Note 9

40

A

Note:

9. TJ = +150°C. Current limited by package constraints.