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ISL70020SEHL/PROTO Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # ISL70020SEHL/PROTO
Description  40V, 65A Enhancement Mode GaN Power Transistors
PDF  13 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70020SEHL/PROTO Datasheet(HTML) 5 Page - Renesas Technology Corp

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ISL70020SEH, ISL73020SEH
2. Specifications
R34DS0007EU0104 Rev.1.04
Page 5 of 12
Apr 21, 2022
2.5
Electrical Specifications
Unless otherwise noted, VDS = 32V. Boldface limits apply across the operating temperature range, -55°C to +125°C; over a total
ionizing dose of 100krad(Si) with exposure at a high dose rate of 50-300rad(Si)/s (ISL70020SEH only); or over a total ionizing dose of
75krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
Parameter
Symbol
Test Conditions
Min
(Note 11)
Typ
(Note 10)
Max
(Note 11)Unit
Static Characteristics
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 1.6mA
40
--
V
Drain-to-Source Leakage Current
IDSS
VDS = 32V, VGS = 0V
-
0.1
1.5
mA
Drain-to-Gate Leakage Current
IGSX
VDS = 32V, VGS = 0V
-
0.1
0.7
mA
Gate-to-Source Forward Leakage
IGSS
VGS = 5V
-
0.1
0.5
mA
Gate-to-Source Reverse Leakage
VGS = -4V
-
0.1
0.2
mA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 12mA
0.7
1.2
2.5
V
Drain-to-Source On-Resistance
rDS(ON)
VGS = 5V, ID = 35A, TA = +25°C
-
3.5
6
mΩ
VGS = 5V, ID = 35A, TA = 125°C
-
5.2
8
mΩ
VGS = 5V, ID = 37A, TA = +25°C (die only)
(Note 12)
-1.2
1.5
mΩ
Source-to-Drain Forward Voltage
VSD
IS = 0.5A, VGS = 0V,
0.7
1.8
3
V
Dynamic Characteristics
Input Capacitance
CISS
VDS = 20V, VGS = 0V (Note 12)
-
1920
-
pF
Output Capacitance
COSS
VDS = 20V, VGS = 0V, TA = +25°C
-
1620
2430
pF
Gate Resistance
rG
TA = +25°C, (Note 12)
-
300
-
mΩ
Reverse Transfer Capacitance
CRSS
VDS = 20V, VGS = 0V (Note 12)-
29
-
pF
Total Gate Charge
QG
VDS = 20V, ID = 35A, VGS = 5V,
TA = +25°C
-19
25
nC
Gate Charge at Threshold
QG(th)
VDS = 20V, ID = 35A (Note 12)
-
3.8
-
nC
Gate-to-Drain Charge
QGD
VDS = 20V, ID = 35A, TA = +25°C
-
7
13
nC
Gate-to-Source Charge
QGS
VDS = 20V, ID = 35A, TA = +25°C
-
-
10
nC
Output Charge
QOSS
VDS = 20V, VGS = 0V (Note 12)
-
45
68
nC
Notes:
10. Typical values shown are not guaranteed.
11. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, and +125°C, unless otherwise specified.
12. Limits are established by characterization and/or design, not tested.



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