ISL70227SEH

FN7958 Rev 3.00

Page 5 of 18

July 18, 2014

Electrical Specifications V

S ±15V, VCM = 0, VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply across

a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with

exposure at a low dose rate of <10mrad(Si)/s.

PARAMETER

DESCRIPTION

CONDITIONS

MIN

(Note 5)TYP

MAX

(Note 5)UNIT

VOS

Offset Voltage

-75

-10

75

µV

-100

100

µV

TCVOS

Offset Voltage Drift

-1

0.1

1

µV/

°C

IOS

Input Offset Current

-10

1

10

nA

-25

25

nA

IB

Input Bias Current

-10

1

10

nA

-25

25

nA

VCM

Input Voltage Range

Guaranteed by CMRR

-13

13

V

-12

12

V

CMRR

Common-Mode Rejection Ratio

VCM = -13V to +13V

115

120

dB

VCM = -12V to +12V

115

dB

PSRR

Power Supply Rejection Ratio

VS = ±2.25V to ±5V

110

117

dB

VS = ±3V to ±15V

110

dB

AVOL

Open-Loop Gain

VO = -13V to +13V

RL = 10kΩ to ground

1000

1500

V/mV

VOH

Output Voltage High

RL = 10kΩ to ground

13.5

13.65

V

13.2

V

RL = 2kΩ to ground

13.4

13.5

V

13.1

V

VOL

Output Voltage Low

RL = 10kΩ to ground

-13.65

-13.5

V

-13.2

V

RL = 2kΩ to ground

-13.5

-13.4

V

-13.1

V

IS

Supply Current/Amplifier

2.2

2.8

mA

3.7

mA

ISC

Short-Circuit

RL = 0Ωto ground

±45

mA

VSUPPLY

Supply Voltage Range

Guaranteed by PSRR

±2.25

±15

V

AC SPECIFICATIONS

GBW

Gain Bandwidth Product

10

MHz

enp-p

Voltage Noise

0.1Hz to 10Hz

85

nVP-P

en

Voltage Noise Density

f = 10Hz

3

nV/√Hz

en

Voltage Noise Density

f = 100Hz

2.8

nV/√Hz

en

Voltage Noise Density

f = 1kHz

2.5

nV/√Hz

en

Voltage Noise Density

f = 10kHz

2.5

nV/

Hz

in

Current Noise Density

f = 10kHz

0.4

pA/

Hz

THD + N

Total Harmonic Distortion + Noise

1kHz, G = 1, VO = 3.5VRMS,

RL = 2kΩ

0.00022

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