ISL70417SEH

FN7962 Rev.5.00

Page 5 of 22

Oct 24, 2019

VOL

Output Voltage Low

RL = 10kΩ to ground

-13.7

-13.5

V

-13.2

V

RL = 2kΩ to ground

-13.55

-13.30

V

-13.0

V

IS

Supply Current/Amplifier

0.44

0.53

mA

0.68

mA

ISC

Short-Circuit Current

43

mA

VSUPPLY

Supply Voltage Range

Guaranteed by PSRR

±2.25

±20

V

AC SPECIFICATIONS

GBWP

Gain Bandwidth Product

AV = 1k, RL = 2kΩ

1.5

MHz

enVp-p

Voltage Noise VP-P

0.1Hz to 10Hz

0.25

µVP-P

en

Voltage Noise Density

f = 10Hz

10

nV/√Hz

f = 100Hz

8.2

nV/√Hz

f = 1kHz

8

nV/√Hz

f = 10kHz

8

nV/√Hz

in

Current Noise Density

f = 1kHz

0.1

pA/√Hz

THD + N

Total Harmonic Distortion

1kHz, G = 1, VO = 3.5VRMS, RL = 2kΩ

0.0009

%

1kHz, G = 1, VO = 3.5VRMS, RL = 10kΩ

0.0005

%

TRANSIENT RESPONSE

SR

Slew Rate, VOUT 20% to 80%

AV = 11, RL = 2kΩ, VO = 4VP-P

0.3

0.5

V/µs

0.2

V/µs

tr, tf,

Small Signal

Rise Time

10% to 90% of VOUT

AV = 1, VOUT = 50mVP-P, RL = 10kΩ to VCM

130

450

ns

625

ns

Fall Time

90% to 10% of VOUT

AV = 1, VOUT = 50mVP-P, RL = 10kΩ to VCM

130

600

ns

700

ns

ts

Settling Time to 0.1%

10V Step; 10% to VOUT

AV = -1, VOUT = 10VP-P, RL = 5kΩ to VCM

21

µs

Settling Time to 0.01%

10V Step; 10% to VOUT

AV = -1, VOUT = 10VP-P, RL = 5kΩ to VCM

24

µs

Settling Time to 0.1%

4V Step; 10% to VOUT

AV = -1, VOUT = 4VP-P, RL = 5kΩ to VCM

13

µs

Settling Time to 0.01%

4V Step; 10% to VOUT

AV = -1, VOUT = 4VP-P, RL = 5kΩ to VCM

18

µs

tOL

Output Positive Overload Recovery Time

AV = -100, VIN = 0.2VP-P, RL = 2kΩ to VCM

5.6

µs

Output Negative Overload Recovery Time

AV = -100, VIN = 0.2VP-P, RL = 2kΩ to VCM

10.6

µs

OS+

Positive Overshoot

AV = 1, VOUT = 10VP-P, Rf = 0Ω, RL =2kΩ to VCM

15

%

33

%

OS-

Negative Overshoot

AV = 1, VOUT = 10VP-P, Rf = 0Ω, RL =2kΩ to VCM

15

%

33

%

Electrical Specifications (VS ±15V) VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the

operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 to 300krad(Si)/s; and

over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)

PARAMETER

DESCRIPTION

TEST CONDITIONS

MIN

(Note 7)TYP

MAX

(Note 7)UNIT