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ISL71043MEVAL1Z Datasheet(PDF) 21 Page - Renesas Technology Corp

Part # ISL71043MEVAL1Z
Description  Radiation Tolerant Low-Side GaN FET Driver
PDF  24 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL71043MEVAL1Z Datasheet(HTML) 21 Page - Renesas Technology Corp

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ISL71040M
6. Radiation Tolerance
R34DS0001EU0101 Rev.1.01
Page 21 of 23
Dec 15, 2022
The data presented in Table 4 supports the conclusion that the ISL71040M is immune to damaging SEE for
operation at VDD = 16.5V and case temperature of 125°C when irradiated with ions of LET 43MeV·cm2/mg at
normal incidence. All of the monitored parameters exhibited variations within the reasonable accuracy of the
measurements.
6.2.4 SET Results
The first ISL71040M SET test looked for the occurrence of VOUT deviations from a static output level. The test
looked for VOUT transitioning through 2V for both IN = 1.00V and IN = 2.00V. Tests were run for both VDD =4.5V
and VDD = 13.2V. No static SET were captured for any of the four DUTs tested in all four of the static conditions.
With four parts each irradiated to 1x107 ion/cm2 at an LET of 43MeV•cm2/mg and 25°C, this put an upper bound
on the cross section for a static SET at 2.5x10-8 cm2.
The next SET testing looked for ±20ns perturbations on a 500kHz signal at the output. Both supply voltages, 4.5V
and 13.2V, were tested. At testing with 43MeV•cm2/mg silver ions, a small number of dynamic SET were found at
the 13.2V bias. Table 5 shows the results for this dynamic testing. The six SET captured spanned the pulse width
deviation from the nominal 1µs of -26ns to +17ns.
6.2.5 SET Discussion and Conclusions
The ISL71040M was found to be immune to damaging SEE when run at VDD = 16.5V and a case temperature of
125°C ±10°C with a 500kHz signal being driven into a 10nF load capacitance and irradiated with normal silver
ions for a surface LET of 43 MeV•cm2/mg. Four parts irradiated to 1x107ion/cm2 each showed no fundamental
changes in the seven monitor parameters as presented in Table 4 on page 20.
The ISL71040M exhibited no static output upsets through 2V at either VDD = 4.5V or VDD = 13.2V, or the input at
either IN = 1.00V (VIL) or IN = 2.00V (VIH). The irradiations to 1x107ion/cm2 were done with normal silver for a
surface LET of 43MeV•cm2/mg at a case temperature of approximately 25°C.
For dynamic SET defined as a ±20ns perturbation in pulse width for a 50% duty cycle 500kHz signal, a very small
cross section (≤1.5x10-7cm2 as reported in Table 5 on page 21) was found for the ISL71040M. This was
determined for 1x107ion/cm2 on each of four parts irradiated with normal incidence silver for LET of
43MeV•cm2/mg. As with the static SET testing VDD was set to both VDD = 4.5V and VDD = 13.2V with the larger
value yielding all the SET recorded. The six captured dynamic SET represented deviations of the pulse width from
the nominal 1µs spanning -26ns to +18ns.
DUT3
Pre
31.0
0.19
69
1.77
94
10.5
4.57
Post
30.4
0.21
69
1.77
85
10.5
4.57
Delta
-1.9%
10.5%
0.0%
0.0%
-9.6%
0.2%
0.0%
DUT4
Pre
32.0
0.23
69
1.79
80
10.5
4.59
Post
31.5
0.22
69
1.79
74
10.5
4.59
Delta
-1.5%
-4.3%
0.0%
0.0%
-7.5%
0.3%
0.0%
Table 5.
ISL71040M ±20ns Perturbation Counts on a 500kHz Square Wave and Cross Sections for Normal
Incidence Ions at 43MeV•cm2/mg at 25°C
43 MeV • cm2/mg
±20ns SET Counts for 500kHz
Average Cross
Section (cm2)
DUT1
DUT2
DUT3
DUT4
VDD = 4.5V
0000
<2.5 x 10-8
VDD = 13.2V
1401
1.5 x 10-7
Table 4.
ISL71040M SEB/L Results (VDD = 16.5V, LET = 43MeV • cm2/mg at 1x107ions/cm2,
TCASE = 125°C ±10°C) (Continued)
VDD = 16.5V
IDD
500kHz (mA)
IIN at
IN = 0V (nA)
IIN at
IN = 13.2V (µA)
IDD at
IN = 1.0V (mA)
VOUT at
IN = 1.0V (µV)
IDD at
IN = 2.0V (mA)
VOUT at
IN = 2.0V (V)



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