Nexperia

PDTA143X/123J/143Z/114Y/124XQB

series

50 V, 100 mA PNP resistor-equipped transistors

10. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

V(BR)CBO

collector-base

breakdown voltage

IC = -100 µA; IE = 0 A

-50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = -2 mA; IB = 0 A

-50

-

-

V

ICBO

collector-base cut-off

current

VCB = -50 V; IE = 0 A

-

-

-100 nA

VCE = -30 V; IB = 0 A

-

-

-100 nA

ICEO

collector-emitter cut-off

current

VCE = -30 V; IB = 0 A; Tj = 150 °C

-

-

-5

µA

emitter-base cut-off current

PDTA143XQB

-

-

-600 µA

PDTA123JQB

-

-

-180 µA

PDTA143ZQB

-

-

-170 µA

PDTA114YQB

-150 µA

IEBO

PDTA124XQB

VEB = -5 V; IC = 0 A

-120 µA

DC current gain

PDTA143XQB

50

-

-

PDTA123JQB

100

-

-

PDTA143ZQB

VCE = -5 V; IC = -10 mA

100

-

-

PDTA114YQB

100

-

-

hFE

PDTA124XQB

VCE = -5 V; IC = -5 mA

80

-

-

collector-emitter saturation voltage

PDTA143XQB

IC = -10 mA; IB = -0.5 mA

-

-

-100 mV

PDTA123JQB

-

-

-100 mV

PDTA143ZQB

-

-

-100 mV

PDTA114YQB

IC = -5 mA; IB = -0.25 mA

-

-

-100 mV

VCEsat

PDTA124XQB

IC = -10 mA; IB = -0.5 mA

-

-

-100 mV

off-state input voltage

PDTA143XQB

-

-0.9

-0.3

V

PDTA123JQB

-

-0.6

-0.5

V

PDTA143ZQB

-

-0.6

-0.5

V

PDTA114YQB

-

-0.7

-0.5

V

VI(off)

PDTA124XQB

VCE = -5 V ; IC = -100 µA

-

-0.8

-0.5

V

on-state input voltage

PDTA143XQB

VCE = -0.3 V ; IC = -20 mA

-2.5

-1.5

-

V

PDTA123JQB

VCE = -0.3 V ; IC = -5 mA

-1.1

-0.75 -

V

PDTA143ZQB

VCE = -0.3 V ; IC = -5 mA

-1.3

-0.9

-

V

PDTA114YQB

VCE = -0.3 V ; IC = -1 mA

-1.4

-0.8

-

V

VI(on)

PDTA124XQB

VCE = -0.3 V ; IC = -2 mA

-2

-1.1

-

V

PDTA143X_TO_124XQB_SER

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©

Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 28 September 2021

5 / 20