TISP6NTP2CD datasheet(3/9 Pages) BOURNS

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MARCH 2002 – REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP6NTP2C High Voltage Ringing SLIC Protector

Electrical Characteristics, 0 °C ≤ TJ ≤ 70 °C (Unless Otherwise Noted)

Thermal Characteristics

Parameter

Test Conditions

Min

Typ

Max

Unit

Off-state current

V D =VDRM, VGK =0

TJ =25 °C-5

µA

-50

µA

V(BO)

Ramp breakover

voltage

UL 497B, dv/dt ≤±100 V/µs, di/dt = ±10 A/µs,

VGG = -100 V, Maximum ramp value = ±10 A

TJ =25 °C

-112

V(BO)

Impulse breakover

voltage

2/10 µs, ITM = -27 A, di/dt = -27 A/µs, RS =50 Ω, VGG = -100 V,

(see Note 3)

-115

VGK(BO)

Gate-cathode impulse

breakover voltage

2/10 µs, ITM = -27 A, di/dt = -27 A/µs, RS =50 Ω, VGG = -100 V,

(see Note 3)

Forward voltage

IF =5A, tw = 200 µs3

VFRM

Ramp peak forward

recovery voltage

UL 497B, dv/dt ≤±100 V/µs, di/dt = ±10 A/µs,

Maximum ramp value = ±10 A

TJ =25 °C5

VFRM

Impulse peak forward

recovery voltage

2/10 µs, ITM = -27 A, di/dt = -27 A/µs, RS =50 Ω,

(see Note 3)

Holding current

I T = -1 A, di/dt = 1A/ms, VGG = -100 V

-150

IGKS

Gate reverse current

VGG =VGK =VGKRM, VKA =0

TJ = 25 °C-5

µA

-50

µA

IGT

Gate trigger current

IT =-3A, tp(g) ≥ 20 µs, VGG = -100 V

TJ =25 °C5

6mA

VGT

Gate-cathode trigger

voltage

IT =-3A, tp(g) ≥ 20 µs, VGG = -100 V

2.5

CKA

Cathode-anode off-

state capacitance

f=1MHz, Vd =1V, IG = 0, (see Note 4)

VD = -3 V

100

VD =-48 V

NOTES: 3. GR-1089-CORE intra-building 2/10, 1.5 kV conditions with 20 MHz bandwidth. The diode forward recovery and the thyristor gate

impulse breakover (overshoot) are not strongly dependent of the SLIC supply voltage value (VGG).

4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

Parameter

Test Conditions

Min

Typ

Max

Unit

RθJA

Junction to free air thermal resistance

TA = 70 °C, EIA/JESD51-3 PCB,

EIA/JESD51-2 environment, Ptot =0.52W

160

°C/W

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