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NXH300B100H4Q2F2SG-R Datasheet(PDF) 1 Page - ON Semiconductor |
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NXH300B100H4Q2F2SG-R Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 14 page ![]() DATA SHEET www.onsemi.com © Semiconductor Components Industries, LLC, 2020 January, 2022 − Rev. 3 1 Publication Order Number: NXH300B100H4Q2F2/D Q2BOOST Module NXH300B100H4Q2F2, NXH300B100H4Q2F2SG-R This high−density, integrated power module combines high−performance IGBTs with 1200 V SiC diode. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • 3−channel in Q2BOOST Package • These are Pb−Free Devices Typical Applications • Solar Inverter • Uninterruptible Power Supplies Figure 1. NXH300B100H4Q2F2PG/SG/SG−R Schematic Diagram MARKING DIAGRAM PIN CONNECTION See detailed ordering and shipping information on page 11 of this data sheet. ORDERING INFORMATION PIM53, 93x47 (PRESSFIT) CASE 180CB PIM53, 93x47 (SOLDER PIN) CASE 180CC NXH300B100H4Q2F2xG ATYYWW NXH300B100H4Q2F2x = Specific Device Code (x = P, S) AT = Assembly & Test Site Code YYWW = Year and Work Week Code |
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