BF556A datasheet(5/11 Pages) PHILIPS

Part #	BF556A

Description	N-channel silicon junction field-effect transistors

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 11 page

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF556A; BF556B; BF556C

Fig.4

Common-source output conductance as a

function of gate-source cut-off voltage;

typical values.

VDS =15V.

handbook, halfpage

−2

−4

−8

100

MRC153

−6

Gos

(

µS)

VGSoff (V)

Fig.5

Drain-source on-state resistance as a

function of gate-source cut-off voltage;

typical values.

VDS = 100 mV; VGS =0.

handbook, halfpage

024

300

100

200

MRC155

RDSon

(

Ω)

VGSoff (V)

Fig.6 Typical output characteristics; BF556A.

handbook, halfpage

048

MRC145

VDS (V)

(mA)

−0.5 V

−1 V

VGS = 0 V

Fig.7 Typical output characteristics; BF556B.

handbook, halfpage

MRC146

VDS (V)

(mA)

VGS = 0 V

−2.0 V

−0.5 V

−2.5 V

−1.0 V

−1.5 V

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