BF556A datasheet(6/11 Pages) PHILIPS

Part #	BF556A

Description	N-channel silicon junction field-effect transistors

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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6 / 11 page

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF556A; BF556B; BF556C

Fig.8 Typical output characteristics; BF556C.

handbook, halfpage

048

MRC147

VDS (V)

(mA)

−1 V

−2 V

−3 V

−4 V

−5 V

VGS = 0 V

Fig.9 Typical input characteristics.

handbook, halfpage

−6

−4

−20

MRC148

VGS (V)

(mA)

BF556C

BF556B

BF556A

VDS =15V.

Fig.10 Drain current as a function of gate-source

voltage; typical values.

handbook, halfpage

−8

−6

−4

−2

103

102

10−1

10−2

10−3

MRC149

(

µA)

VGS (V)

BF556C

BF556B

BF556A

VDS =15V.

Fig.11 Gate current as a function of drain-gate

voltage; typical values.

handbook, halfpage

−102

−10−2

−10−1

−1

−10

MRC151

VDG (V)

(pA)

ID = 10 mA

IGSS

1 mA

0.1 mA

ID = 10 mA only for BF556B and BF556C.

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