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DMN3061SVT Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN3061SVT
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3061SVT Datasheet(HTML) 3 Page - Diodes Incorporated

  DMN3061SVT Datasheet HTML 1Page - Diodes Incorporated DMN3061SVT Datasheet HTML 2Page - Diodes Incorporated DMN3061SVT Datasheet HTML 3Page - Diodes Incorporated DMN3061SVT Datasheet HTML 4Page - Diodes Incorporated DMN3061SVT Datasheet HTML 5Page - Diodes Incorporated DMN3061SVT Datasheet HTML 6Page - Diodes Incorporated DMN3061SVT Datasheet HTML 7Page - Diodes Incorporated  
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DMN3061SVT
Document number: DS41717 Rev. 2 - 2
3 of 7
www.diodes.com
April 2019
© Diodes Incorporated
DMN3061SVT
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
V
GS = 1.8V
V
GS = 2.2V
V
GS = 2.5V
V
GS = 3.0V
V
GS = 3.5V
V
GS = 3.8V
V
GS = 4.0V
V
GS = 4.5V
V
GS =10.0V
0
5
10
15
0
1
2
3
4
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS= 5V
T
J=-55℃
T
J= 25℃
T
J= 85℃
T
J= 125℃
T
J= 150℃
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0
5
10
15
20
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 4.5V
V
GS = 3.3V
V
GS = 10V
0.03
0.035
0.04
0.045
0.05
0.055
0.06
0.065
0.07
0.075
0.08
0
2
4
6
8
10
12
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 2A
I
D =1.5A
I
D = 3.1A
0
0.02
0.04
0.06
0.08
0.1
0
5
10
15
20
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS=10V
T
J= -55℃
T
J= 25℃
T
J= 85℃
T
J= 125℃
T
J= 150℃
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS = 10V, ID = 3.1A
V
GS = 4.5V, ID = 2A
V
GS = 3.3V, ID = 1.5A



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