2003 Mar 20

3

NXP Semiconductors

Product data sheet

General purpose controlled avalanche

(double) diodes

BAS29; BAS31; BAS35

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VRRM

repetitive peak reverse voltage

−

110

V

VR

continuous reverse voltage

−

90

V

IF

continuous forward current

single diode loaded; see Fig.2;

note 1

−

250

mA

double diode loaded; see Fig.2;

note 1

−

150

mA

IFRM

repetitive peak forward current

−

600

mA

IFSM

non-repetitive peak forward current

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1

µs

−

10

A

t = 100

µs

−

4

A

t = 1 s

−

0.75

A

Ptot

total power dissipation

Tamb = 25 °C; note 1

−

250

mW

IRRM

repetitive peak reverse current

−

600

mA

ERRM

repetitive peak reverse energy

tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C

−

5

mJ

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C