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BAS29 Datasheet(PDF) 7 Page - Nexperia B.V. All rights reserved |
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BAS29 Datasheet(HTML) 7 Page - Nexperia B.V. All rights reserved |
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7 / 10 page ![]() 2003 Mar 20 6 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 Fig.5 Reverse current as a function of junction temperature. handbook, halfpage 10 200 0 MBH282 100 Tj ( oC) IR ( µA) 1 10−2 10−1 102 (1) (2) (1) VR = 90 V; maximum values. (2) VR = 90 V; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. handbook, halfpage 010 20 30 VR (V) 40 Cd (pF) 30 10 0 20 MGD003 handbook, full pagewidth t rr (1) I F t output signal t r t t p 10% 90% VR input signal V = V I x R RF S R = 50 S Ω IF D.U.T. R = 50 i Ω SAMPLING OSCILLOSCOPE MGA881 Fig.7 Reverse recovery voltage test circuit and waveforms. (1) IR = 3 mA. |
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