BFS505 datasheet(6/12 Pages) PHILIPS

6 / 12 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS505

In Figs 6 to 9, GUM = maximum unilateral power gain;

MSG = maximum stable gain; Gmax = maximum available

gain.

Fig.6 Gain as a function of collector current.

VCE = 6 V; f = 900 MHz; Tamb =25 °C.

handbook, halfpage

MRC016

02468

MSG

GUM

gain

(dB)

IC (mA)

Fig.7 Gain as a function of collector current.

VCE = 6 V; f = 2 GHz; Tamb =25 °C.

handbook, halfpage

MRC017

02468

MSG

GUM

Gmax

gain

(dB)

IC (mA)

Fig.8 Gain as a function of frequency.

IC = 1.25 mA; VCE = 6 V; Tamb =25 °C.

handbook, halfpage

MRC015

10−2

10−1

110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.9 Gain as a function of frequency.

IC = 5 mA; VCE = 6 V; Tamb =25 °C.

handbook, halfpage

MRC014

10−1

10−2

110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

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