BFS505 datasheet(2/12 Pages) PHILIPS

2 / 12 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS505

FEATURES

• Low current consumption

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability

• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323

envelope.

It is intended for low power amplifiers,

oscillators and mixers particularly in

RF portable communication

equipment (cellular phones, cordless

phones, pagers) up to 2 GHz.

PINNING

DESCRIPTION

Code: N0

base

emitter

collector

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCES

collector-emitter voltage

RBE =0

−−

DC collector current

−−

Ptot

total power dissipation

up to Ts = 147 °C; note 1

−−

150

hFE

DC current gain

IC = 5 mA; VCE = 6 V; Tj =25 °C

120

250

transition frequency

IC = 5 mA; VCE = 6 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

Ic = 5 mA; VCE = 6 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

Ic = 1.25 mA; VCE =6 V;

f = 900 MHz; Tamb =25 °C

−

1.2

1.7

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