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PUML1/DG Datasheet(PDF) 7 Page - Nexperia B.V. All rights reserved |
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PUML1/DG Datasheet(HTML) 7 Page - Nexperia B.V. All rights reserved |
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7 / 13 page ![]() PUML1_DG_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 14 July 2008 6 of 12 NXP Semiconductors PUML1/DG 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET VCE =10V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 3. TR1: DC current gain as a function of collector current; typical values Fig 4. TR1: Collector current as a function of collector-emitter voltage; typical values IC/IB =10 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C IC/IB =10 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 5. TR1: Base-emitter saturation voltage as a function of collector current; typical values Fig 6. TR1: Collector-emitter saturation voltage as a function of collector current; typical values 006aab256 200 300 100 400 500 hFE 0 IC (mA) 10−1 103 102 110 (1) (2) (3) VCE (V) 010 8 46 2 006aaa993 0.04 0.06 0.02 0.08 0.1 IC (A) 0 IB (mA) = 0.56 0.50 0.44 0.38 0.32 0.26 0.20 0.14 0.08 0.02 006aab257 IC (mA) 10−1 103 102 110 0.5 0.9 1.3 VBEsat (V) 0.1 (1) (2) (3) 006aab258 IC (mA) 10−1 103 102 110 10−1 1 VCEsat (V) 10−2 (1) (2) (3) |
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