STM32H7 datasheet(133/357 Pages) STMICROELECTRONICS

133 / 357 page

DS12110 Rev 10

133/357

STM32H742xI/G STM32H743xI/G

Electrical characteristics (rev Y)

320

Table 53. Flash memory programming

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Unit

tprog

Word (266 bits) programming

time

Program/erase parallelism x 8

290

580(2)

µs

Program/erase parallelism x 16

180

360

Program/erase parallelism x 32

130

260

Program/erase parallelism x 64

100

200

tERASE128KB Sector (128 KB) erase time

Program/erase parallelism x 8

Program/erase parallelism x 16

1.8

3.6

Program/erase parallelism x 32

1.1

2.2

Program/erase parallelism x 64

tME

Mass erase time

Program/erase parallelism x 8

Program/erase parallelism x 16

Program/erase parallelism x 32

Program/erase parallelism x 64

Vprog

Programming voltage

Program parallelism x 8

1.62

3.6

Program parallelism x 16

Program parallelism x 32

Program parallelism x 64

1.8

3.6

1. Guaranteed by characterization results.

2. The maximum programming time is measured after 10K erase operations.

Table 54. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

NEND

Endurance

TJ = –40 to +125 °C (6 suffix versions)

kcycles

tRET

Data retention

1 kcycle at TA = 85 °C

Years

10 kcycles at TA = 55 °C

1. Guaranteed by characterization results.

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