STM32H7 datasheet(136/357 Pages) STMICROELECTRONICS

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Electrical characteristics (rev Y)

STM32H742xI/G STM32H743xI/G

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DS12110 Rev 10

6.3.13

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each

sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC

JS-001 and ANSI/ESDA/JEDEC JS-002 standards.

Static latchup

Two complementary static tests are required on six parts to assess the latchup

performance:

•

A supply overvoltage is applied to each power supply pin

•

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with JESD78 IC latchup standard.

6.3.14

I/O current injection characteristics

As a general rule, a current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during the normal

product operation. However, in order to give an indication of the robustness of the

microcontroller in cases when an abnormal injection accidentally happens, susceptibility

tests are performed on a sample basis during the device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher

than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out

Table 57. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Packages

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body

model)

TA= +25 °C conforming to

ANSI/ESDA/JEDEC JS-

001

All

1000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA= +25 °C conforming to

ANSI/ESDA/JEDEC JS-

002

All

250

1. Guaranteed by characterization results.

Table 58. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latchup class

TA = +25 °C conforming to JESD78

II level A

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