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STM32H7 Datasheet(PDF) 138 Page - STMicroelectronics |
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STM32H7 Datasheet(HTML) 138 Page - STMicroelectronics |
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138 / 357 page ![]() Electrical characteristics (rev Y) STM32H742xI/G STM32H743xI/G 138/357 DS12110 Rev 10 All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements for FT I/Os is shown in Figure 22. VHYS(2) TT_xx, FT_xxx and NRST I/O input hysteresis 1.62 V< VDDIOx <3.6 V - 250 - mV BOOT0 I/O input hysteresis - 200 - Ilkg(4) FT_xx Input leakage current(2) 0< VIN ≤ Max(VDDXXX)(9) -- +/-250 nA Max(VDDXXX) < VIN ≤ 5.5 V (5)(6)(9) - - 1500 FT_u IO 0< VIN ≤ Max(VDDXXX)(9) -- +/- 350 Max(VDDXXX) < VIN ≤ 5.5 V (5)(6)(9) - - 5000(7) TT_xx Input leakage current 0< VIN ≤ Max(VDDXXX) (9) -- +/-250 VPP (BOOT0 alternate function) 0< VIN ≤ VDDIOX -- 15 VDDIOX < VIN ≤ 9 V - - 35 RPU Weak pull-up equivalent resistor(8) VIN=VSS 30 40 50 kΩ RPD Weak pull-down equivalent resistor(8) VIN=VDD(9) 30 40 50 CIO I/O pin capacitance - - 5 - pF 1. Compliant with CMOS requirement. 2. Guaranteed by design. 3. VDDIOx represents VDDIO1, VDDIO2 or VDDIO3. VDDIOx= VDD. 4. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following formula: ITotal_Ikg_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max). 5. All FT_xx IO except FT_lu, FT_u and PC3. 6. VIN must be less than Max(VDDXXX) + 3.6 V. 7. To sustain a voltage higher than MIN(VDD, VDDA, VDD33USB) +0.3 V, the internal pull-up and pull-down resistors must be disabled. 8. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). 9. Max(VDDXXX) is the maximum value of all the I/O supplies. Table 60. I/O static characteristics (continued) Symbol Parameter Condition Min Typ Max Unit |
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