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STM32H7 Datasheet(PDF) 239 Page - STMicroelectronics

Part # STM32H7
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, up to 2MB flash, up to 1MB RAM, 46 com. and analog interfaces
PDF  357 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7 Datasheet(HTML) 239 Page - STMicroelectronics

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DS12110 Rev 10
239/357
STM32H742xI/G STM32H743xI/G
Electrical characteristics (rev V)
320
7.3.11
Memory characteristics
Flash memory
The characteristics are given at TJ = –40 to 125 °C unless otherwise specified.
The devices are shipped to customers with the flash memory erased.
Table 149. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode
-
6.5
-
mA
Write / Erase 16-bit mode
-
11.5
-
Write / Erase 32-bit mode
-
20
-
Write / Erase 64-bit mode
-
35
-
Table 150. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
Word (266 bits) programming
time
Program/erase parallelism x 8
-
290
580(2)
µs
Program/erase parallelism x 16
-
180
360
Program/erase parallelism x 32
-
130
260
Program/erase parallelism x 64
-
100
200
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism x 8
-
2
4
s
Program/erase parallelism x 16
-
1.8
3.6
Program/erase parallelism x 32
-
1.1
2.2
Program/erase parallelism x 64
-
1
2
tME
Mass erase time
Program/erase parallelism x 8
-
13
26
Program/erase parallelism x 16
-
8
16
Program/erase parallelism x 32
-
6
12
Program/erase parallelism x 64
-
5
10
Vprog
Programming voltage
Program parallelism x 8
1.62
-
3.6
V
Program parallelism x 16
Program parallelism x 32
Program parallelism x 64
1.8
-
3.6
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 10K erase operations.



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