DMC62D0SV

Document number: DS39751 Rev. 2 - 3

7 of 10

www.diodes.com

January 2023

© 2023 Copyright Diodes Incorporated. All Rights Reserved.

DMC62D0SV

Typical Performance Characteristics

– Q2 P-CHANNEL (Continued)

0

1

2

3

4

5

6

7

8

-50

-25

0

25

50

75

100

125

150

V

= -5V

GS

I

= -200mA

D

V

= -10V

GS

I = -500mA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 19 On-Resistance Variation with Temperature

0

0.5

1

1.5

2

-50

-25

0

25

50

75

100

125

150

I = -1mA

D

I = -250µA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 20 Gate Threshold Variation vs. Ambient Temperature

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

J

T = 125°C

J

T = 85°C

J

T = 25°C

J

T = -55°C

J

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 21 Diode Forward Voltage vs. Current

1

10

100

0

10

20

30

40

50

60

Ciss

Coss

Crss

f=1MHz

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 22 Typical Junction Capacitance

0

2

4

6

8

10

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

V

= -10V

DS

I = -500mA

D

Q , TOTAL GATE CHARGE (nC)

g

Figure 23 Gate Charge

0.001

0.01

0.1

1

1

10

100

RDS(on)

Limited

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

T

= 150°C

J (m ax )

T = 25°C

C

V

= 10V

GS

Single Pulse

DUT on 1 * MRP Board

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 24 SOA, Safe Operation Area