DMC62D0SV

Document number: DS39751 Rev. 2 - 3

3 of 10

www.diodes.com

January 2023

© 2023 Copyright Diodes Incorporated. All Rights Reserved.

DMC62D0SV

Electrical Characteristics

– Q1 N-CHANNEL (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS =60V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±10

µA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.0

—

2.5

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

—

1.7

Ω

VGS = 10V, ID = 500mA

—

—

3

VGS = 4.5V, ID = 200mA

Diode Forward Voltage

VSD

—

—

1.4

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

CISS

—

30

—

pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

4.2

—

pF

Reverse Transfer Capacitance

CRSS

—

2.9

—

pF

Total Gate Charge

QG

—

0.4

—

nC

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge

QGS

—

0.15

—

nC

Gate-Drain Charge

QGD

—

0.09

—

nC

Turn-On Delay Time

tD(ON)

—

4.3

—

ns

VDD = 30V, VGS = 10V,

RG = 25Ω, ID = 200mA

Turn-On Rise Time

tR

—

2.7

—

ns

Turn-Off Delay Time

tD(OFF)

—

15.1

—

ns

Turn-Off Fall Time

tF

—

6.5

—

ns

Electrical Characteristics

– Q2 P-CHANNEL (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-50

—

—

V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

—

-1

µA

VDS = -50V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±10

µA

VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-1

—

-2.5

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

—

6

Ω

VGS = -10V, ID = -500mA

—

—

8

VGS = -5V, ID = -200mA

Diode Forward Voltage

VSD

—

—

-1.4

V

VGS = 0V, IS = -115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

CISS

—

26

—

pF

VDS = -25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

4.2

—

pF

Reverse Transfer Capacitance

CRSS

—

2.4

—

pF

Total Gate Charge

QG

—

0.3

—

nC

VGS = -4.5V, VDS = -10V,

ID = -500mA

Gate-Source Charge

QGS

—

0.14

—

nC

Gate-Drain Charge

QGD

—

0.12

—

nC

Turn-On Delay Time

tD(ON)

—

4.1

—

ns

VDD = -30V, VGS = -10V,

RG = 50Ω, ID = -270mA

Turn-On Rise Time

tR

—

2.8

—

ns

Turn-Off Delay Time

tD(OFF)

—

20.2

—

ns

Turn-Off Fall Time

tF

—

9.15

—

ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.