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P25Q32SL Datasheet(PDF) 12 Page - Puya Semiconductor Co., Ltd. |
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P25Q32SL Datasheet(HTML) 12 Page - Puya Semiconductor Co., Ltd. |
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12 / 111 page ![]() P25Q32SL Datasheet Puya Semiconductor Page 12 of 111 5.4 AC Characteristics for Program and Erase Table 5-4 AC parameters for program and erase (Ta=-40°C to +85°C) Sym. Parameter 1.65V to 2.0V Units Min. Typ. Max. TESL(6) Erase Suspend Latency 30 us TPSL(6) Program Suspend Latency 30 us TPRS(4) Latency between Program Resume and next Suspend 20 us TERS(5) Latency between Erase Resume and next Suspend 20 us tPP Page program time (up to 256 bytes) 1.6 2.5 ms tPE Page erase time 16 30 ms tSE Sector erase time 16 30 ms tBE1 Block erase time for 32K bytes 16 30 ms tBE2 Block erase time for 64K bytes 16 30 ms tCE Chip erase time 96 160 ms Note 1. tCH + tCL must be greater than or equal to 1/ Frequency. 2. Typical values given for TA=25°C. Not 100% tested. 3. Only applicable as a constraint for a WRSR instruction. 4. Program operation may be interrupted as often as system request. The minimum timing of tPRS must be observed before issuing the next program suspend command. However, in order for a Program operation to make progress, the average tPRS in resume-to-suspend loop(s) must be more than 100us. Not 100% tested. 5. Erase operation may be interrupted as often as system request. The minimum timing of tERS must be observed before issuing the next erase suspend command. However, in order for an Erase operation to make progress, the average tERS in resume-to-suspend loop(s) must be more than 100us. Notes. Not 100% tested. 6. Latency time is required to complete Erase/Program Suspend operation. 7. The value guaranteed by characterization, not 100% tested in production. Figure 5-4 Serial Input Timing SCLK CS# SI MSB SO High-Z LSB tCHSL tSLCH tDVCH tCHDX tSHCH tCHSH tCHCL tCLCH tSHSL tCLH tCLL |
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