µPA807T

2

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

0.1

µA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

0.1

µA

DC Current Gain

hFE

VCE = 2 V, IC = 7 mANote 1

70

140

Gain Bandwidth Product (1)

fT

VCE = 2 V, IC = 7 mA, f = 2 GHz

10

13

GHz

Gain Bandwidth Product (2)

fT

VCE = 1 V, IC = 5 mA, f = 2 GHz

8.5

12

GHz

Feed-back Capacitance

Cre

VCB = 2 V, IE = 0, f = 1 MHzNote 2

0.4

0.6

pF

Insertion Power Gain (1)

|S21e|2

VCE = 2 V, IC = 7 mA, f = 2 GHz

7.5

9

dB

Insertion Power Gain (2)

|S21e|2

VCE = 1 V, IC = 5 mA, f = 2 GHz

7

8.5

dB

Noise Figure (1)

NF

VCE = 2 V, IC = 3 mA, f = 2 GHz

1.5

2

dB

Noise Figure (2)

NF

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.5

2

dB

hFE Ratio

hFE1/hFE2

VCE = 2 V, IC = 7 mA

0.85

A smaller value among

hFE of hFE1 = Q1, Q2

A larger value among

hFE of hFE2 = Q1, Q2

Notes 1. Pulse Measurement: Pw

≤ 350

µs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

KB

Marking

T84

hFE Value

70 to 140

TYPICAL CHARACTERISTICS (TA = 25

°C)

Ambient Temperature TA (°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT

vs. COLLECTOR TO EMITTER VOLTAGE

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT

vs. BASE TO EMITTER VOLTAGE

100

200

0

50

100

150

50

40

30

20

10

0

0.5

1.0

25

20

15

10

5

0

1.0

2.0

3.0

200 A

180 A

160 A

140 A

120 A

100 A

80 A

60 A

40 A

IB = 20 A

VCE = 2 V

30 mW

60 mW

2 Elements in Total

Per Element

µ

µ

µ

µ

µ

µ

µ

µ

µ

µ

DC CURRENT GAIN vs.

COLLECTOR CURRENT

500

200

100

50

20

10

1

2

5

10

20

50

100

VCE = 2 V

VCE = 1 V

Collector Current IC (mA)