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S32K311NHT0MPAST Datasheet(PDF) 49 Page - NXP Semiconductors |
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S32K311NHT0MPAST Datasheet(HTML) 49 Page - NXP Semiconductors |
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49 / 146 page ![]() Table 14. V11 regulator (NMOS ballast transistor control) electrical specifications (continued) Symbol Description Min Typ Max Unit Condition Spec Number CNMOS NMOS gate stability capacitor — 1 — nF — — 6.11 Supply currents All data in this table is preliminary and based on first samples. NOTE Typical current numbers are indicative for typical silicon process and may vary based on the silicon distribution and user configuration. Typical conditions assumes VDD_HV_A = VREFH = 5 V, VDD_HV_B = 5V (if the VDD_HV_B domain present in the device), temperature = 25 °C, and typical silicon process unless otherwise stated. In STANDBY configuration, no current flows through the V15 supply. NXP Semiconductors Power management S32K3xx Data Sheet, Rev. 7, 04/2023 Data Sheet: Technical Data Preliminary Information 49 / 146 |
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