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C30659-900nm Series

C30659-900nm Series

Page 2

Ω AC Coupled

900nm Silicon APD

Detector Type

C30659-900-R8A

C30659-900-R5B

(Si APD C30817E)

(Si APD C30902E)

Min

Typ

Max

Min

Typ

Max

Active Diameter

0.8

0.5

mm

Active Area

0.5

0.2

Bandwidth Range

50

200

MHz

for constant Gain

-

2.2

-

-

0.7

-

V/°C

VR for specified responsivity

275

Note 1

435

180

Note 1

260

V

Temperature sensor sensitivity

-1.8

-2.1

-2.4

-1.8

-2.1

-2.4

mV/°C

Responsivity

At 830nm

-

2700

-

-

460

-

kV/W

At 900nm

-

3000

-

-

400

-

kV/W

-

82

-

-

12

-

k

Ω

Noise Equivalent Power (NEP) (note 3)

f - 100 kHz,

∆f = 1.0 Hz

At 830nm

-

14

17

-

35

55

fW/

√Hz

At 900nm

-

12

15

-

40

65

fW/

√Hz

Output Spectral Noise Voltage:

-

35

45

-

15

25

nV/

√Hz

Output Impedance

33

40

50

33

40

50

Ω

40

50

-

175

200

-

MHz

λ = 830 and 900nm)

10% to 90% points

-

7

-

-

2

-

ns

λ = 830 and 900nm)

90% to 10% points

-

7

-

-

2

-

ns

Recovery time after overload (note 4)

-

-

150

-

-

150

ns

Output Voltage Swing (1k

Ω load) (note 5)

2

3

-

2

3

-

V

Output Voltage Swing (50

Ω load) (note 5)

0.7

0.9

-

0.7

0.9

-

V

Output Offset Voltage

-1

0.25

1

-1

0.25

1

V

Positive Supply Current (V+)

-

20

35

-

20

35

mA

Negative Supply Current (V-)

-

10

20

-

10

20

mA

3. NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity.

4. 0dBm, 250ns pulse.

5. Pulsed operation.

117142_C30659.qxd

6/21/04

2:33 PM

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