MRF18030BLSR3 datasheet(1/8 Pages) FREESCALE

Part #	MRF18030BLSR3

Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

Logo

1 / 8 page

MRF18030BLR3 MRF18030BLSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies

from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

amplifier applications. Specified for GSM 1930-1990 MHz.

• Typical GSM Performance:

Power Gain - 14 dB (Typ) @ 30 Watts

Efficiency - 50% (Typ) @ 30 Watts

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

- 0.5, +65

Vdc

Gate-Source Voltage

VGS

- 0.5, +15

Vdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

83.3

0.48

W

W/°C

Storage Temperature Range

Tstg

- 65 to +150

°C

Case Operating Temperature

TC

150

°C

Operating Junction Temperature

TJ

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

RθJC

2.1

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

Document Number: MRF18030B

Rev. 7, 5/2006

Freescale Semiconductor

Technical Data

MRF18030BLR3

MRF18030BLSR3

1930-1990 MHz, 30 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465E-04, STYLE 1

NI-400

MRF18030BLR3

CASE 465F-04, STYLE 1

NI-400S

MRF18030BLSR3

Similar Part No. - MRF18030BLSR3

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MRF18030BR3	275Kb / 8P	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
Motorola, Inc	MRF18030BSR3	275Kb / 8P	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

More results

Similar Description - MRF18030BLSR3

Manufacturer	Part #	Datasheet	Description
Freescale Semiconductor...	MRF1550NT1	288Kb / 13P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S23140HR3	434Kb / 12P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S19140HR3	404Kb / 11P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V2300NR1	522Kb / 14P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S18100NR1	701Kb / 20P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF1535NT1	662Kb / 19P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF5S19150HR3	439Kb / 12P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF9045LR1	397Kb / 11P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF8S9100HR3	300Kb / 14P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V4300NBR5	822Kb / 15P	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

More results

MRF18030BLSR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

MRF18030BLSR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

Similar Part No. - MRF18030BLSR3

Similar Description - MRF18030BLSR3

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL