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CS5535 Datasheet(PDF) 552 Page - National Semiconductor (TI) |
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CS5535 Datasheet(HTML) 552 Page - National Semiconductor (TI) |
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552 / 555 page ![]() www.national.com 552 Revision 0.8 Electrical Specifications (Continued) 6.5 LOW VOLTAGE DETECT (LVD) PARAMETERS The LVD electrical parameters are defined in Figure 6-11 and listed in Table 6-24. Use of internal signals power_good_standby and power_good_working is illus- trated in Figure 3-6 "Reset Logic" on page 59. In this subsection, unless otherwise noted: • All timing specifications are specified under the oper- ating conditions listed in Table 6-3 on page 526 (i.e., VCORE (VDD) and VCORE_VSB (VDD_VSB) = All; VIO (VDDIO) and VIO_VSB (VDDIO_VSB) = All; TCASE = All). • The LVD circuit incorporates no clock signals. Figure 6-11. LVD Electrical Parameter Definitions Table 6-24. LVD Parameters Signal Parameter Min Max Units Comment/Condition power_good_standby VRASING_TRIP_CORE_VSB 0.90 1.00 V VFALLING_TRIP_CORE_VSB 0.72 0.90 V VHYSTERESIS_CORE_VSB 23 110 mV Note 1. VRASING_TRIP_IO_VSB 2.15 2.85 V VFALLING_TRIP_IO_VSB 2.32 2.80 V VHYSTERESIS_IO_VSB 100 580 mV Note 1. power_good_working VRASING_TRIP_CORE 0.90 1.00 V VFALLING_TRIP_CORE 0.72 0.90 V VHYSTERESIS_CORE 23 110 mV Note 1. Note 3: Note 1. The resulting circuit has high noise immunity. Any glitches less than 150 ns are rejected. Hysteresis is guaranteed by design. V = VOPERATING V = VRAISING_TRIP V = VFALLING_TRIP V = 0 V = 0 power_good ~= VCORE_VSB power_good ~= VSS |
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