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CS5535 Datasheet(PDF) 552 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # CS5535
Description  Geode??CS5535 I/O Companion Multi-Function South Bridge
PDF  555 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

CS5535 Datasheet(HTML) 552 Page - National Semiconductor (TI)

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552
Revision 0.8
Electrical Specifications (Continued)
6.5
LOW VOLTAGE DETECT (LVD) PARAMETERS
The LVD electrical parameters are defined in Figure 6-11
and
listed
in
Table
6-24.
Use
of
internal
signals
power_good_standby and power_good_working is illus-
trated in Figure 3-6 "Reset Logic" on page 59.
In this subsection, unless otherwise noted:
• All timing specifications are specified under the oper-
ating conditions listed in Table 6-3 on page 526 (i.e.,
VCORE (VDD) and VCORE_VSB (VDD_VSB) = All; VIO
(VDDIO) and VIO_VSB (VDDIO_VSB) = All; TCASE = All).
• The LVD circuit incorporates no clock signals.
Figure 6-11. LVD Electrical Parameter Definitions
Table 6-24. LVD Parameters
Signal
Parameter
Min
Max
Units
Comment/Condition
power_good_standby
VRASING_TRIP_CORE_VSB
0.90
1.00
V
VFALLING_TRIP_CORE_VSB
0.72
0.90
V
VHYSTERESIS_CORE_VSB
23
110
mV
Note 1.
VRASING_TRIP_IO_VSB
2.15
2.85
V
VFALLING_TRIP_IO_VSB
2.32
2.80
V
VHYSTERESIS_IO_VSB
100
580
mV
Note 1.
power_good_working
VRASING_TRIP_CORE
0.90
1.00
V
VFALLING_TRIP_CORE
0.72
0.90
V
VHYSTERESIS_CORE
23
110
mV
Note 1.
Note 3:
Note 1. The resulting circuit has high noise immunity. Any glitches less than 150 ns are rejected. Hysteresis is guaranteed
by design.
V = VOPERATING
V = VRAISING_TRIP
V = VFALLING_TRIP
V = 0
V = 0
power_good ~=
VCORE_VSB
power_good ~= VSS



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