UPD75P068CU datasheet(13/42 Pages) RENESAS

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µPD75P068

VPP

VDD

VPP

VDD +1

VDD

P40-P43

P50-P53

MD0

(P30)

MD1

(P31)

MD2

(P32)

MD3

(P33)

Data input

Data output

Data input

Write

Verify

Additional write

Address

increment

Repeat X times

3.2

WRITING TO THE PROGRAM MEMORY

The procedure for writing to program memory is described below; high-speed write is possible.

(1)

Connect all unused pins to VSS through resistors. Apply a low-level signal to the X1 pin.

(2)

Apply 5 V to VDD and VPP pins.

(3)

Wait 10

µs.

(4)

Select program memory address clear mode.

(5)

Apply +6 V to VDD and +12.5 V to VPP.

(6)

Select program inhibit mode.

(7)

Select write mode for 1 ms duration and write data.

(8)

Select program inhibit mode.

(9)

Select verify mode. If write is successful, proceed to step (10). If write fails, repeat steps (7) to (9).

(10) Perform additional write for (Number (X) of repetitions of steps (7) to (9))

× 1 ms duration.

(11) Select program inhibit mode.

(12) Increment the program memory address by inputting four pulses on the X1 pin.

(13) Repeat steps (7) to (12) until the last address is reached.

(14) Select program memory address clear mode.

(15) Apply 5 V to VDD and VPP pins.

(16) Turn the power off.

The timing for steps (2) to (12) is shown below.

UPD75P068CU Datasheet(PDF) 13 Page - Renesas Technology Corp

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