MCP19116 datasheet(22/246 Pages) MICROCHIP

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MCP19116/7

DS20005479D-page 22

 2015-2020 Microchip Technology Inc.

4.0

ELECTRICAL CHARACTERISTICS

4.1

ABSOLUTE MAXIMUM RATINGS †

VIN -VGND (DC).......................................................................................................................................... –0.3V to +44V

VIN (transient < 500 ms)............................................................................................................................................+48V

PDRV ..................................................................................................................................(GND - 0.3V) to (VDR +0.3V)

SDRV ................................................................................................................................. (GND - 0.3V) to (VDR +0.3V)

VDD Internally Generated .........................................................................................................................................+6.5V

VDR Externally Generated......................................................................................................................................+13.5V

Voltage on MCLR with respect to GND.................................................................................................... -0.3V to +13.5V

Maximum voltage: any other pin ......................................................................................+(VGND - 0.3V) to (VDD +0.3V)

Maximum output current sunk by any single I/O pin ...............................................................................................25 mA

Maximum output current sourced by any single I/O pin ..........................................................................................25 mA

Maximum current sunk by all GPIO.........................................................................................................................90 mA

Maximum current sourced by all GPIO .................................................................................................................. 35 mA

Storage Temperature..............................................................................................................................–65°C to +150°C

Maximum Junction Temperature ...........................................................................................................................+150°C

Operating Junction Temperature ............................................................................................................–40°C to +125°C

ESD protection on all pins (HBM)........................................................................................................................... 1.0 kV

CDM protection on corner pins............................................................................................................................. +/-750V

CDM protection on other pins............................................................................................................................... +/-500V

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

4.2

Electrical Characteristics

Electrical Specifications: Unless otherwise noted, VIN =12V, FSW =150 kHz, TA = +25°C. Boldface specifications

apply over the TA range of –40°C to +125°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input

Input Voltage

VIN

4.5

—

Input Quiescent

Current

—6

7.5

VIN = 12V, Not switching

—6

7.5

VIN = 20V, Not switching

Shutdown Current

ISHDN

—50

µA

VIN =12V

(Note 1)

Linear Regulator VDD

Internal Circuitry Bias

Voltage

VDD

4.75

5.1

5.5

VVIN = 6.0V to 42V

Maximum External

VDD Output Current

IDD_OUT

——

VIN = 6.0V to 42V

(Note 2)

Internal Circuitry Bias

Voltage during SLEEP

VDD_SLEEP

2.4

—

VVIN = 4.5V to 42V

IDD_OUT = 1mA

Maximum Available

External VDD Output

Current During SLEEP

IDD_OUT_SLEEP

——

VIN = 6.0V to 42V

VDD = VDD_SLEEP

Note 1:

Refer to Section 16.0, Power-Down Mode (Sleep).

VDD is the voltage present at the VDD pin.

Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2%

below its nominal value measured at a 1V differential between VIN and VDD.

Ensured by design, not production tested.

These parameters are characterized, but not production tested.

The VDD LDO will limit the total source current to a maximum of 35 mA. Individually each pin can source a

maximum of 15 mA.

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