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MCP19116 Datasheet(PDF) 29 Page - Microchip Technology |
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MCP19116 Datasheet(HTML) 29 Page - Microchip Technology |
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29 / 246 page ![]() 2015-2020 Microchip Technology Inc. DS20005479D-page 29 MCP19116/7 GPIO Pins Maximum GPIO Sink Current ISINK_GPIO —— 90 mA Note 6 Maximum GPIO Source Current ISOURCE_GPIO —— 35 mA Note 6 GPIO Weak Pull-Up Current IPULL-UP_GPIO 50 250 400 µA GPIO Input Low Voltage VGPIO_IL GND — 0.8 V I/O Port with TTL buffer VDD =5V GND — 0.2 VDD V I/O Port with Schmitt Trig- ger buffer, VDD =5V GND — 0.2 VDD VMCLR GPIO Input High Voltage VGPIO_IH 2.0 — VDD V I/O Port with TTL buffer, VDD = 5V 0.8VDD — VDD V I/O Port with Schmitt Trigger buffer, VDD =5V 0.8VDD — VDD VMCLR GPIO Output Low Voltage VGPIO_OL —— 0.12 VDD VIOL =7 mA, VDD =5V GPIO Output High Voltage VGPIO_OH VDD – 0.7 — — V IOH =2.5 mA VDD =5V GPIO Input Leakage Current GPIO_IIL —±0.1 ±1 µA Negative current is defined as current sourced by the pin. POR Power-on Reset Voltage VPOR —2.13 — V VDD Rising Power-on Reset Voltage Hysteresis VPOR_HYS — 100 — mV Thermal Shutdown Thermal Shutdown TSHD — 150 — °C Thermal Shutdown Hysteresis TSHD_HYS —20 — °C 4.2 Electrical Characteristics (Continued) Electrical Specifications: Unless otherwise noted, VIN =12V, FSW =150 kHz, TA = +25°C. Boldface specifications apply over the TA range of –40°C to +125°C. Parameters Sym. Min. Typ. Max. Units Conditions Note 1: Refer to Section 16.0, Power-Down Mode (Sleep). 2: VDD is the voltage present at the VDD pin. 3: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its nominal value measured at a 1V differential between VIN and VDD. 4: Ensured by design, not production tested. 5: These parameters are characterized, but not production tested. 6: The VDD LDO will limit the total source current to a maximum of 35 mA. Individually each pin can source a maximum of 15 mA. |
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