DATA SHEET

www.onsemi.com

© Semiconductor Components Industries, LLC, 2008

February, 2022 − Rev. 3

1

Publication Order Number:

FDFMA2P029Z/D

MOSFET – P-Channel,

POWERTRENCH) Integrated

with Schottky Diode

-20 V, -3.1 A, 95 m

W

FDFMA2P029Z,

FDFMA2P029Z-F106

General Description

This device is designed specifically as a single package solution for

the battery charge switch in cellular handset and other ultra−portable

applications. It features a MOSFET with very low on−state resistance

and an independently connected low forward voltage schottky diode

allows for minimum conduction losses.

The MicroFET

t 2X2 package offers exceptional thermal

performance for its physical size and is well suited to linear mode

applications.

Features

MOSFET

• Max rDS(on) = 95 mW at VGS = –4.5 V, ID = –3.1 A

• Max rDS(on) = 141 mW at VGS = –2.5 V, ID = –2.5 A

• HBM ESD Protection Level > 2.5 kV (Note 1)

Schottky

• VF < 0.37 V @ 500 mA

• Low Profile − 0.8 mm Maximum − In the New Package MicroFET

2x2 mm

• These Devices are Pb−Free and are RoHS Compliant

NOTE:

1. The diode connected between the gate and source serves only

protection against ESD. No gate overvoltage rating is implied.

−20 V

−3.1 A

SCHOTTKY DIODE

MARKING DIAGRAM

See detailed ordering and shipping information on page 6 of

this data sheet.

ORDERING INFORMATION

20 V

141 mW @ −2.5 V

95 mW @ −4.5 V

2 A

rDS(on) MAX

0.37 V @ 500 mA

ID MAX

VDS MAX

MOSFET

VRRM MAX

IO MAX

VF MAX

WDFN6 2x2, 0.65P

MicroFET

CASE 511DA

&Z&2&K

P29

&Z = Assembly Plant Code

&2 = 2−Digit Date Code

&K = 2−Digits Lot Run Traceability Code

P29 = Device Code

A

NC

D

C

G

S

D

C

Pin 1

PIN CONNECTIONS

1

3

2

4

5

6

A

NC

D

C

G

S