DMN67D8LT

Document number: DS38187 Rev. 2 - 2

2 of 7

www.diodes.com

April 2020

© Diodes Incorporated

DMN67D8LT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

210

170

mA

Maximum Continuous Body Diode Forward Current (Note 6)

IS

210

mA

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

0.8

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

260

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

497

°C/W

Total Power Dissipation (Note 6)

PD

350

mW

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

366

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

IDSS

—

—

1.0

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.0

—

2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

3.2

1.5

7.5

5.0



VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

Forward Transconductance

gFS

80

—

—

mS

VDS = 10V, ID = 0.2A

Diode Forward Voltage

VSD

—

0.78

1.5

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

22

—

pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

4.1

—

pF

Reverse Transfer Capacitance

Crss

—

2.5

—

pF

Gate Resistance

Rg

—

120

—



VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

361

—

pC

VDS = 10V, ID = 250mA

Total Gate Charge (VGS = 10V)

Qg

—

821

—

Gate-Source Charge

Qgs

—

162

—

Gate-Drain Charge

Qgd

—

116

—

Turn-On Delay Time

tD(ON)

—

2.8

—

ns

VDD = 30V, ID = 0.2A,

RL = 150

, VGEN = 10V, RGEN =

25



Turn-On Rise Time

tR

—

3.0

—

Turn-Off Delay Time

tD(OFF)

—

7.6

—

Turn-Off Fall Time

tF

—

5.6

—

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6.

Device mounted on 1”

 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.