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DMN67D8LT Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN67D8LT
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN67D8LT Datasheet(HTML) 3 Page - Diodes Incorporated

  DMN67D8LT Datasheet HTML 1Page - Diodes Incorporated DMN67D8LT Datasheet HTML 2Page - Diodes Incorporated DMN67D8LT Datasheet HTML 3Page - Diodes Incorporated DMN67D8LT Datasheet HTML 4Page - Diodes Incorporated DMN67D8LT Datasheet HTML 5Page - Diodes Incorporated DMN67D8LT Datasheet HTML 6Page - Diodes Incorporated DMN67D8LT Datasheet HTML 7Page - Diodes Incorporated  
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DMN67D8LT
Document number: DS38187 Rev. 2 - 2
3 of 7
www.diodes.com
April 2020
© Diodes Incorporated
DMN67D8LT
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS=2.5V
V
GS=3.0V
V
GS=3.5V
V
GS=4.5V
V
GS=5.0V
V
GS=10.0V
0
0.2
0.4
0.6
0.8
1
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS=5V
-55
℃
25
℃
85
℃
150
℃
125
℃
0
2
4
6
8
10
2
4
6
8
10
12
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D=500mA
1
1.2
1.4
1.6
1.8
2
2.2
0
0.2
0.4
0.6
0.8
1
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS=5V
V
GS=10V
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS=10V, ID=500mA
V
GS=5V, ID=50mA
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
V
GS=10V
-55
℃
25
℃
85
℃
125
℃
150
℃



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