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SST36VF1602C Datasheet(PDF) 13 Page - Silicon Storage Technology, Inc |
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SST36VF1602C Datasheet(HTML) 13 Page - Silicon Storage Technology, Inc |
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13 / 34 page ![]() Data Sheet 16 Mbit Dual-Bank Flash Memory SST36VF1601C / SST36VF1602C 13 ©2006 Silicon Storage Technology, Inc. S71249-06-000 1/06 TABLE 6: CFI QUERY IDENTIFICATION STRING1 Address x16 Mode Address x8 Mode Data2 Description 10H 20H 0051H Query Unique ASCII string “QRY” 11H 22H 0052H 12H 24H 0059H 13H 26H 0001H Primary OEM command set 14H 28H 0007H 15H 2AH 0000H Address for Primary Extended Table 16H 2CH 0000H 17H 2EH 0000H Alternate OEM command set (00H = none exists) 18H 30H 0000H 19H 32H 0000H Address for Alternate OEM extended Table (00H = none exits) 1AH 34H 0000H T6.2 1249 1. Refer to CFI publication 100 for more details. 2. In x8 mode, only the lower byte of data is output. TABLE 7: SYSTEM INTERFACE INFORMATION Address x16 Mode Address x8 Mode Data1 1. In x8 mode, only the lower byte of data is output. Description 1BH 36H 0027H VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 38H 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 3AH 0000H VPP min (00H = no VPP pin) 1EH 3CH 0000H VPP max (00H = no VPP pin) 1FH 3EH 0004H Typical time out for Program 2N µs (24 = 16 µs) 20H 40H 0000H Typical time out for min size buffer program 2N µs (00H = not supported) 21H 42H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms) 22H 44H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms) 23H 46H 0001H Maximum time out for Program 2N times typical (21 x 24 = 32 µs) 24H 48H 0000H Maximum time out for buffer program 2N times typical 25H 4AH 0001H Maximum time out for individual Sector-/Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 4CH 0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms) T7.3 1249 |
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