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PSMN2R2-25YLC

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Product data sheet

Rev. 1 — 2 May 2011

7 of 15

Nexperia

PSMN2R2-25YLC

N-channel 25 V 2.4 m

Ω logic level MOSFET in LFPAK using NextPower

Qoss

output charge

VGS =0V; VDS =12V; f=1MHz;

Tj =25°C

-

16.7

-

nC

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj =25°C;

see Figure 17

-0.8

1.1

V

trr

reverse recovery time

IS =25A; dIS/dt = -100 A/µs; VGS =0V;

VDS =12V

-35

-ns

Qr

recovered charge

-

31

-

nC

ta

reverse recovery rise

time

VGS =0V; IS =25A; dIS/dt = -100 A/µs;

VDS =12V; see Figure 18

-21

-ns

tb

reverse recovery fall

time

-14

-ns

Table 7.

Characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 6.

Output characteristics; drain current as a

function of drain-source voltage

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003a a f 710

0

20

40

60

80

100

0

0.5

1

1.5

2

VDS (V)

ID

(A)

2.4

VGS (V) =

2.6

2.8

3.0

3.5

4.5

10

003a a f 711

0

2

4

6

8

10

12

048

12

16

VGS (V)

RDSon

(mΩ)