Nexperia

PSMN2R2-40YSD

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

aaa-030114

0

1

2

3

4

5

6

7

8

0

70

140

210

280

350

VGS (V)

ID

ID

(A)

(A)

Tj = 25°C

Tj = 25°C

175°C

175°C

VDS = 8 V

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

aaa-030115

0

50

100

150

200

250

300

350

0

2

4

6

8

10

ID (A)

RDSon

RDSon

(mΩ)

(mΩ)

4.5 V

4.5 V

5 V

5 V

5.5 V

5.5 V

8 V

8 V

VGS = 10 V

VGS = 10 V

Tj = 25 °C

Fig. 10. Drain-source on-state resistance as a function

of drain current; typical values

aaa-028641

-60

-30

0

30

60

90

120 150 180

0

0.4

0.8

1.2

1.6

2

Tj (°C)

aa

Fig. 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

aaa-030116

0

10

20

30

40

50

60

0

2

4

6

8

10

QG (nC)

VGS

VGS

(V)

(V)

20 V

20 V

VDS = 8 V

VDS = 8 V

32 V

32 V

Tj = 25 °C; ID = 25 A

Fig. 12. Gate-source voltage as a function of gate

charge; typical values

PSMN2R2-40YSD

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Product data sheet

25 September 2019

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