Nexperia

PSMN2R3-80SSF

NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package

Symbol

Parameter

Conditions

Min

Max

Unit

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering

temperature

-

260

°C

Source-drain diode

IS

source current

Tmb = 25 °C

-

240

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

1038

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche energy

ID = 78 A; Vsup ≤ 80 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

tp = 163 µs; Fig. 4

[1]

-

663

mJ

IAS

non-repetitive avalanche

current

Vsup ≤ 100 V; VGS = 10 V; Tj(init) = 25 °C;

RGS = 50 Ω; Fig. 4

[1]

-

78

A

[1] Protected by 100% test

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

aaa-035321

0

25

50

75

100 125 150 175 200

0

50

100

150

200

250

300

Tmb (°C)

ID

ID

(A)

(A)

VGS ≥ 10 V

(1) 240 A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 2. Continuous drain current as a function of

mounting base temperature

PSMN2R3-80SSF

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© Nexperia B.V. 2022. All rights reserved

Preliminary data sheet

22 August 2022

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