Nexperia

PSMN2R8-80SSF

NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in LFPAK88 package

Symbol

Parameter

Conditions

Min

Max

Unit

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering

temperature

-

260

°C

Source-drain diode

IS

source current

Tmb = 25 °C

-

190

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

760

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche energy

ID = 67 A; Vsup ≤ 80 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

tp = 147 µs

[1]

-

513

mJ

IAS

non-repetitive avalanche

current

Vsup ≤ 80 V; VGS = 10 V; Tj(init) = 25 °C;

RGS = 50 Ω

[1]

-

67

A

[1] Protected by 100% test

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a function of mounting base temperature

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistance from

junction to mounting

base

-

[tbd]

0.44

K/W

Fig. 2

-

35

-

K/W

Rth(j-a)

thermal resistance from

junction to ambient

Fig. 3

-

70

-

K/W

PSMN2R8-80SSF

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© Nexperia B.V. 2022. All rights reserved

Objective data sheet

23 June 2022

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