IMX8XLB0IEC datasheet(40/112 Pages) NXP

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1. As programmed in the associated IOMUX (PDRV field) register.

3.7.1.2 Single-voltage 1.8 V GPIO output buffer drive strength

The following table shows the GPIO output buffer drive strength (OVDD 1.8 V).

Table 31. Single-voltage GPIO 1.8 V output impedance DC parameters

Parameter

Symbol

Test conditions

Typical

Units

Output impedance

1 DSE=000

200

1 DSE=001

100

1 DSE=010

1 DSE=011

1 DSE=100

1 DSE=101

1 DSE=110

1 DSE=111

1. As programmed in the associated IOMUX (DSE field) register.

3.7.1.3 Single-voltage 3.3 V GPIO output buffer drive strength

The following table shows the GPIO output buffer drive strength (OVDD 3.3 V).

Table 32. Single-voltage GPIO 3.3 V output impedance DC parameters

Parameter

Symbol

Test conditions

Typical

Units

Output impedance

1 DSE=00

400

1 DSE=01

200

1 DSE=10

100

1 DSE=11

1. As programmed in the associated IOMUX (DSE field) register.

3.7.2 DDR I/O output buffer impedance

The following tables show DDR3L and LPDDR4 I/O output buffer impedance of the

device.

The ZQ Calibration cell uses a single register (ZQnPR0) to determine the target output

buffer impedances of the pull-up driver and the pull-down driver, as well as the target

on-die termination impedance. The resulting calibration setting is then applied to all

DDR pads within the PHY complex.

Electrical characteristics

i.MX 8XLite Industrial Applications Processors, Rev. 3, 08/2023

NXP Semiconductors

IMX8XLB0IEC Datasheet(PDF) 40 Page - NXP Semiconductors

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