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MRF9200LSR3 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc |
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MRF9200LSR3 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc |
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7 / 12 page ![]() MRF9200LR3 MRF9200LSR3 7 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 350 8 20 3 0 60 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 100 10 18 16 10 50 40 30 20 10 Gps ηD 14 12 VDD = 26 Vdc IDQ = 1800 mA f = 880 MHz 400 8 20 1 −60 60 Pout, OUTPUT POWER (WATTS) PEP Figure 12. Power Gain, Efficiency and IMD versus Output Power 100 10 18 16 10 20 0 −20 −40 Gps ηD 14 12 40 IMD VDD = 26 Vdc, IDQ = 1800 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing Figure 13. Power Gain versus Output Power Pout, OUTPUT POWER (WATTS) CW VDD = 28 V 250 14 19 0 200 50 16 15 100 150 17 18 26 V IDQ = 1800 mA f = 880 MHz 24 V 20 V 16 V 12 V |
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